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| PNP Silicon AF Transistor q q q q q BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 (NPN) Type BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 Marking BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 Ordering Code (tape and reel) Q62702-C2130 Q62702-C2131 Q62702-C2132 Q62702-C2133 Pin Configuration 1 2 3 4 B C E C Package1) SOT-223 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VCE0 VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values 20 25 25 5 1 2 100 200 1.5 150 - 65 ... + 150 Unit V A mA W C Rth JA Rth JS 72 17 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 1 01.97 BCP 69 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 10 A, IB = 0 Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 mA, VCE = 10 V IC = 500 mA, VCE = 1 V V(BR)CE0 V(BR)CES V(BR)CB0 V(BR)EB0 ICB0 - - IEB0 hFE BCP 69 BCP 69-10 BCP 69-16 BCP 69-25 VCEsat VBE - - 0.6 - - 1 50 85 85 100 160 60 - - - 100 160 250 - - - 375 160 250 375 - 0.5 V - - - - 100 100 100 nA A Values typ. max. Unit 20 25 25 5 - - - - - - - - V nA - IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V AC characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 100 MHz fT - 100 - MHz 1) Pulse test conditions: t 300 s, D = 2 %. Semiconductor Group 2 BCP 69 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Transition frequency fT = f (IC) VCE = 5 V, f = 100 MHz Collector cutoff current ICB0 = f (TA) VCB = 25 V DC current gain hFE = f (IC) VCB = 1 V Semiconductor Group 3 BCP 69 Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Base-emitter saturation voltage IC = f (VBEsat) hFE = 10 Permissible pulse load Ptot max/Ptot DC = f (tp) Semiconductor Group 4 |
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